Domain Wall Velocity Characteristics of Chirality-Optimized Spintronic Structure

Authors

  • Ala A. Manzoor Thi Qar University image/svg+xml Author
  • Jaafar O. Radi Al Qadisiyah University Author
  • Fadel H. Dayeh Misan University Author

DOI:

https://doi.org/10.2025/bcea4d19

Abstract

In this letter, a standard design of spintronic device based on multilayer structure was considered to study the effects of the current density in this structure on the domain wall velocity and Dzyaloshinskii-Moriya interaction (DMI). The performance of the spintronic device can be optimized by determining critical thresholds of the binding energy that maintains the domain walls at the crystalline structure defects. It is approximately typical behavior as the increasing current density provides better electrical environment for the DMI with maximum dynamic or diffusion current flows and minimum leakage current flow at the interfaces.

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Published

2026-07-01