Optoelectronic Characteristics of Nickel Cobaltite Nanoparticles-Decorated Porous Silicon Photodetector

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DOI:

https://doi.org/10.2025/g75qgy30

Abstract

In this work, Nickel cobaltite (NiCo2O4) nanoparticles were incorporated into a porous silicon (PSi) structures prepared on silicon substrates by photoelectrochemical etching (PECE) technique. The electrical characteristics of the fabricated photodetector showed that the heterojunction of NiCo2O4 nanoparticles concentration of 4x10-4 M exhibits a relatively high photocurrent up to 2 mA. The optoelectronic characteristics showed a responsivity of 0.41 A/W, an external quantum efficiency of 0.78, and a detectivity of 6.57×10¹⁰ Jones. The response of the fabricated photodetector was evaluated via the ratio of response time to fall time, which was 0.82.

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Published

2026-07-01

Issue

Vol. 9 No. 3 (2026): Iraqi Journal of Applied Physics Letters

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Articles

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Copyright (c) 2026 IRAQI JOURNAL OF APPLIED PHYSICS LETTERS

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