Photoluminescence Characteristics of Multilayer Al/ZnO/SiO2 Structures Grown on Silicon Substrates by DC Reactive Magnetron Sputtering Technique
DOI:
https://doi.org/10.2025/852z3b59Abstract
In this work, multilayer structures were fabricated on silicon substrates by dc reactive magnetron sputtering technique. Different layers from silicon dioxide (SiO2), zinc oxide (ZnO), and aluminum (Al) were deposited with different thicknesses to compare different multilayer structures by recording their photoluminescence (PL) spectra in the spectral range of 200-1100 nm. The structure of Al/ZnO/SiO2/Si showed higher PL intensity than those of other structures due to the radiative activity of ZnO in addition to the important role of aluminum layer to enhance the PL signal as a result of the localized surface plasmon resonance (LSPR) at the interface between Al and ZnO layers.
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