Structural and Morphological Characteristics of Cobalt Oxide Nanoparticles Incorporated in Porous Silicon Structures
DOI:
https://doi.org/10.2025/b1bp0765Abstract
This letter presents the fabrication and optoelectronic characteristics of a Co3O4 NPs/PSi/Si heterojunction photodetector. The porous silicon layer was formed via photo-electrochemical etching, followed by Co3O4 NP deposition using a sol-gel method. The device exhibited excellent rectifying I-V behavior and a strong photoresponse, with photocurrent showing a linear dependence on light intensity. Spectral responsivity peaked at 600 nm, demonstrating the heterostructure's effectiveness as a visible-light photodetector driven by efficient charge separation at the p-n junction.
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