Optoelectronic Characteristics of Co3O4 NPs/PSi/Si Photodetector

Authors

  • Noor Alhuda H. Hashim Uruk University Author
  • Tabarak A. Al-Mashhadani University of Baghdad Author

DOI:

https://doi.org/10.2025/h15axv41

Abstract

This letter presents the fabrication and optoelectronic characteristics of a Co3O4 NPs/PSi/Si heterojunction photodetector. The porous silicon layer was formed via photo-electrochemical etching, followed by Co3O4 NP deposition using a sol-gel method. The device exhibited excellent rectifying I-V behavior and a strong photoresponse, with photocurrent showing a linear dependence on light intensity. Spectral responsivity peaked at 600 nm, demonstrating the heterostructure's effectiveness as a visible-light photodetector driven by efficient charge separation at the p-n junction.

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Published

2025-12-21

Issue

Vol. 9 No. 1 (2026): Iraqi Journal of Applied Physics Letters

Section

Articles

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Copyright (c) 2025 IRAQI JOURNAL OF APPLIED PHYSICS LETTERS

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