Deposition of Molybdenum Oxide Thin Films on Silicon Substrates for High-Performance Transparent Electronics
DOI:
https://doi.org/10.2025/wk10fc54Abstract
The fabrication of uniform molybdenum oxide (MoO₃) thin films via atomic layer deposition (ALD) for transparent thin-film transistors was reported. The films exhibit high optical transmittance (≥90%) and low defect density, verified by X-ray photoelectron spectroscopy and AFM analysis. Electrical testing reveals improved carrier mobility and reduced threshold voltage hysteresis. These results establish MoO₃ as a promising candidate for low-power, transparent electronic devices and next-generation display technologies.
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