Characterization of Magnetized Microplasmas for Etching Processes in Next-Generation Bipolar Semiconductor Device Fabrication

Abstract

A compact, low-pressure magnetized microplasma source was developed to enhance etching precision in advanced semiconductor fabrication. Diagnostics using Langmuir probes and optical emission spectroscopy revealed highly anisotropic ion energy distributions influenced by external magnetic fields. The plasma exhibited superior uniformity and controllable electron density gradients. Simulation results indicate that optimized magnetic confinement improves surface smoothness and minimizes substrate damage. This study establishes a foundation for scalable, energy-efficient plasma tools in nanoscale patterning and microelectronics manufacturing. This research addresses the critical need for advanced plasma sources capable of achieving the stringent uniformity, selectivity, and anisotropy requirements of next-generation semiconductor etching processes, particularly as feature sizes approach the sub-10 nm scale.