Effects of Silicon Dioxide Layer on Optoelectronic Characteristics of FeO/PSi Heterostructures
DOI:
https://doi.org/10.2025/q8rrqm82Abstract
In this study, the influence of silicon dioxide (SiO2) layer on the optoelectronic performance of SiO2/FeO/porous silicon (PSi) heterojunction photodetectors was studied. Devices with FeO thickness of 300 nm were fabricated and evaluated in terms of dark current, photocurrent, sensitivity, spectral responsivity, external quantum efficiency (EQE), specific detectivity (D*), noise-equivalent power (NEP), and temporal response. The results reveal that the deposition of SiO2 layer plays a decisive role in charge transport, carrier recombination, and optical absorption. The highest values of responsivity, EQE, and specific detectivity were 0.381 A/W, 0.861%, and 6.858×10¹³ Jones, respectively, at ~550 nm along with the lowest NEP (~2.62×10-12 W).
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