Effects of Etching Current Density on Surface Characteristics of Palladium-Hosted Porous Silicon Structures
Abstract
In this work, porous silicon layer formed by photoelectrochemical etching on the surface of p-type silicon substrate was decorated with palladium nanoparticles applied over the porous layer by the electrostatic injection technique. The porosity, porous layer thickness and pore diameter were found reasonably depending on the current density passing through the circuit used for the Photoelectrochemical etching process. However, both the porosity and porous layer thickness showed saturation limit at high current densities, while the pore diameter was found to increase continuously with increasing current density.
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