Surface Topography of Silicon Nitride Nanostructured Thin Films Prepared by Reactive Sputtering
Abstract
In this work, silicon nitride nanostructures were prepared by a reactive sputtering technique. The optical properties of the prepared nanostructures were studied by their absorption and transmission spectra in the range of 200-800nm. As well, the structural properties of these structures were studied to determine the optimum preparation conditions. The produced nanostructured thin films showed average particle size of 20-30nm, average particle diameter of 99.22 nm, and average roughness of 0.777nm.
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