Sheet Resistance of Cobalt/Silicon Ohmic Contacts Fabricated by Laser-Induced Diffusion
Abstract
In this work, the electrical characteristics of the ohmic contacts fabricated by laser-induced diffusion of cobalt dopants in silicon substrates were studied. The main parameters affecting these characteristics are the laser fluence and number of laser pulses used for irradiation. An Nd:YAG laser operating in Q-switching mode and wavelength of 1064nm was used to irradiate the contact region of cobalt on silicon substrate to induce the diffusion of cobalt dopants into the structure of the silicon. The electrical measurements showed a reasonable modification as the ohmic contact resistance decreased with increasing laser fluence as a result of the enhanced diffusion of metallic dopants into the semiconductor substrate.
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