APL007-1-6 Temperature-Dependent Optoelectronic Characteristics of p-SnO2/n-Si Heterojunction Structures
Abstract
In this work, n-type tin oxide thin films were grown on n-type silicon substrates to fabricate heterojunctions. The electrical measurements on the prepared samples were performed at different substrate and annealing temperatures. The results of these measurements showed good uniformity of these films throughout the current-voltage characteristics in both forward and reverse bias conditions at different annealing temperatures. They showed that the I-V characteristics were highly improved by thermal annealing. The reflectivity and internal quantum efficiency of the p-SnO2/n-Si were measured as functions of the incident light wavelength. As well, the short-circuit current density and open-circuit voltage were measured as functions of the incident light intensity.
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