APL007-1-4 Characteristics of Visible-Blind p-Cu2O/n-Si Heterojunction Fabricated by Plasma-Induced Bonding Technique
Abstract
The fabrication and characterization of the Cu2O-Si heterojunction produced by plasma-induced bonding technique were presented in this work. The produced heterojunction was asymmetrical consisting of p-type Cu2O on a n-type silicon substrate. The built-in potential of this heterojunction was determined to be about 0.75 eV with typical spectral responsivity within the range 200-400 nm and maximum responsivity at 350nm. With dark current of 37 μA, maximum reverse bias current of 165 μA and ideality factor of 1.22, the results explained better characteristics than those of the same heterojunction produced by some other techniques. The main advantages of this visible-blind heterojunction are the low cost and high responsivity.
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