Structural Characteristics of Plasma-Induced Bonded Cobalt Oxide Films on Silicon Substrate

Authors

  • Oday A. Hammadi Author

Abstract

In this work, the characteristics of the Co3O4-Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric heterojunction consisting of n-type Co3O4 on a p-type silicon substrate. The Si substrate and Co3O4 sample were bonded by subjecting them to the plasma formed between two electrodes. The main measurements included the structural characteristics of the formed structures. The results explained better characteristics than those of the same heterojunction produced by thermal evaporation technique.

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Published

2024-11-11

Issue

Vol. 7 No. 3 (2024): Iraqi Journal of Applied Physics Letters

Section

Articles

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