Surface Morphology and Topography of Silicon Dioxide Nanostructures Prepared by DC Reactive Sputtering
Abstract
In this work, highly-pure silicon oxide nanostructures were prepared by a closed-field unbalanced magnetron plasma sputtering technique. These nanostructures were characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) in order to determine the optimum preparation conditions. These conditions are optimized to control the structural characteristics, mainly surface morphology and topography, of such nanostructures and hence to satisfy certain requirements and purposes in spectroscopic and photonic applications of SiO2 nanostructures.
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