Current-Voltage Characteristics of Silicon Nitride Nanoparticles Embedded in Porous Silicon Matrix
Abstract
In this work, the effect of thermal annealing on the characteristics of heterojunction fabricated from silicon nitride nanoparticles embedded in porous silicon matrix formed on silicon substrate was studied. The porous layer was formed by photoelectrochemical etching method. The electrical and spectral characteristics of this photodetector were determined and optimized before and after annealing process. Maximum surface reflectance of 1.81 and 1.73%, maximum responsivity of 0.495 and 0.55 A/W, ideality factor of 1.72 and 1.81, maximum external quantum efficiency of 76 and 83.5 %, and built-in potential of 0.79 and 0.72V were obtained before and after annealing, respectively.
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