APL007-2-6 Characteristics of p-n Junction Detectors Based on Thermally-Grown Tellurium-Doped Silicon

Authors

  • Naseer K. Lazim Author

Abstract

In this work, the photoelectric properties of tellurium-doped silicon p-n junction were studied. Illumination of impurity absorption range influence on current-voltage and spectral characteristics of the fabricated device were considered. The photoresponse dependencies on electric intensity, current and radiation power at the sample were observed. Results obtained in this work showed that the current-sensitivity of the fabricated structures at forward bias is rather higher than that of photoresistors. The threshold photosensitivity and the detectivity were up to 2.85x10‑16W.Hz-1/2 and 2.1x1011cm.Hz1/2W-1, respectively.

Downloads

Published

2024-12-06

Issue

Vol. 7 No. 2 (2024): Iraqi Journal of Applied Physics Letters

Section

Articles

License

Copyright (c) 2024 IRAQI JOURNAL OF APPLIED PHYSICS LETTERS

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

We, the undersigned, the author/authors of this article that is submitted to the Iraqi Journal of Applied Physics Letters (IJAPLett) for publication, declare that we have neither taken part or full text from any published work by others nor presented or published it elsewhere in any other journal. We also declare transferring copyrights and conduct of this article to the Iraqi Journal of Applied Physics Letters (IJAPLett) after accepting it for publication.

The authors will keep the following rights:

  1. Possession of the article such as patent rights.
  2. Free of charge use of the article or part of it in any future work by the authors such as books and lecture notes after informing the IJAPLett editorial board.
  3. Republishing the article for any personal purposes of the authors after taking journal permission.