APL007-2-1 Characteristics of Thermally-Annealed Homojunction Silicon Photodetector Prepared by Low-Pressure Plasma-Assisted Technique
Abstract
In this work, the effect of thermal annealing on the characteristics of silicon homojunction photodetector was studied. This homojunction photodetector was fabricated by the plasma-induced etching of p-type silicon substrate and plasma sputtering of n-type silicon target in vacuum. The electrical and spectral characteristics of this photodetector were determined and optimized before and after annealing process. Maximum surface reflectance of 1.89 and 1.81%, maximum responsivity of 0.495 and 0.55 A/W, ideality factor of 1.80 and 1.99, maximum external quantum efficiency of 76 and 83.5 %, and built-in potential of 0.79 and 0.72V were obtained before and after annealing, respectively.
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