APL007-2-5 Characteristics of CoO/Si Heterostructure Prepared by Plasma-Induced Bonding
Abstract
In this work, the characteristics of the CoO-Si structure produced by plasma-induced bonding technique were studied. The produced structure was an asymmetric heterojunction consisting of n-type CoO on a p-type silicon substrate. The Si substrate and CoO sample were bonded by subjecting them to the plasma formed between two electrodes. The measurements included the structural and electrical characteristics. The built-in potential of the produced heterojunction is about 0.9eV with typical spectral responsivity within the range 300-900 nm. With dark current of 50μA, maximum reverse bias current of 180μA and ideality factor of 1.18, the results explained better characteristics than those of the same heterojunction produced by thermal evaporation technique.
Downloads
Published
Issue
Section
License
Copyright (c) 2024 IRAQI JOURNAL OF APPLIED PHYSICS LETTERS
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
We, the undersigned, the author/authors of this article that is submitted to the Iraqi Journal of Applied Physics Letters (IJAPLett) for publication, declare that we have neither taken part or full text from any published work by others nor presented or published it elsewhere in any other journal. We also declare transferring copyrights and conduct of this article to the Iraqi Journal of Applied Physics Letters (IJAPLett) after accepting it for publication.
The authors will keep the following rights:
- Possession of the article such as patent rights.
- Free of charge use of the article or part of it in any future work by the authors such as books and lecture notes after informing the IJAPLett editorial board.
- Republishing the article for any personal purposes of the authors after taking journal permission.
