APL007-2-3 Second Harmonic Generation of Near-Infrared Semiconductor Laser with Temperature-Dependent Power Control
Abstract
In this work, a semiconductor laser of 810nm wavelength and a nonlinear crystalline structure were used to achieve the second harmonic generation. Adjusting the distance between laser diode and a diffraction grating in order to control the output of laser can extend the laser cavity. The parameters such as grating tilt angle, nonlinear medium tilt angle, its temperature, polarization angle and fundamental power and their effects on the second harmonic generation were determined to study the nonlinear generation process. The maximum power of the second harmonic obtained in this work was 112 nW in the violet region.
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