Enhancement of Photoluminescence Characteristics of Zinc Oxide Nanostructures Using Inclined Pulsed Laser Irradiation
Abstract
Zinc oxide (ZnO) thin films were deposited on silicon substrates using thermal evaporation method. These films were annealed at 400°C for 15 minutes to support the adhesion of these films to the substrates as well as to enhance the structural characteristics of these films. The ZnO/Si structures were irradiated with pulses from a Q-switched Nd:YAG laser operating at 1064nm, 300μs, and 10 repetition rate at 45° incident angle with respect to the normal on the surface of sample. The photoluminescence (PL) spectra of these samples were recorded, analyzed and compared to introduce the enhancement as a result of laser irradiation.
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