Enhancement of Photoluminescence Characteristics of Zinc Oxide Nanostructures Using Inclined Pulsed Laser Irradiation

Authors

  • Ali Reza Bagheri Author
  • Shaheed Ibrahimi Author

Abstract

Zinc oxide (ZnO) thin films were deposited on silicon substrates using thermal evaporation method. These films were annealed at 400°C for 15 minutes to support the adhesion of these films to the substrates as well as to enhance the structural characteristics of these films. The ZnO/Si structures were irradiated with pulses from a Q-switched Nd:YAG laser operating at 1064nm, 300μs, and 10 repetition rate at 45° incident angle with respect to the normal on the surface of sample. The photoluminescence (PL) spectra of these samples were recorded, analyzed and compared to introduce the enhancement as a result of laser irradiation.

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Published

2025-01-20