Effect of Quantum Dots Density on Response Time of Photodetectors Fabricated from Quantum Dots Deposited on Porous Indium Arsenide Layers
Abstract
In this work, the effect of quantum dots (QDs) density prepared on porous indium arsenide (InAs) layer grown on silicon substrates was studied. Pulsed-laser deposition was used to prepare the QDs while the Photoelectrochemical etching technique was used to form the porous InAs layer on the silicon substrate. The density of the QDs was found very influential on the shortening of the response time of the photodetectors fabricated from the multilayer structures. The shortest response time achieved was 55μs for QDs density of 104 /mm2.
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