Effect of Intermediate Layer Surface Condition on Photoresponse of Multilayer GaAs-based Devices
Abstract
In this work, the effect of surface roughness of the active layer in a GaAs-based multilayer structure on the Photoresponse of this structure is introduced and analyzed. Results showed that the surface condition of the active layer of p+-GaAs nanostructured layer in a GaAs-based multilayer structure has a powerful effect on the Photoresponse of such structures. The surface roughness of the active p+-GaAs nanostructured layer was modified by varying the evaporation power used to prepare this layer.
Downloads
Published
Issue
Section
License
Copyright (c) 2025 IRAQI JOURNAL OF APPLIED PHYSICS LETTERS

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
We, the undersigned, the author/authors of this article that is submitted to the Iraqi Journal of Applied Physics Letters (IJAPLett) for publication, declare that we have neither taken part or full text from any published work by others nor presented or published it elsewhere in any other journal. We also declare transferring copyrights and conduct of this article to the Iraqi Journal of Applied Physics Letters (IJAPLett) after accepting it for publication.
The authors will keep the following rights:
- Possession of the article such as patent rights.
- Free of charge use of the article or part of it in any future work by the authors such as books and lecture notes after informing the IJAPLett editorial board.
- Republishing the article for any personal purposes of the authors after taking journal permission.